IntTraps
400 nm SiO2 capacitor simulation of interface trap formation with state transitions in Sentaurus TCAD
Install / Use
/learn @elchatz/IntTrapsREADME
IntTraps
400 nm SiO2 capacitor simulation of interface trap formation with state transitions in Sentaurus TCAD:
Using state transition theory, interface trap formation is simulated caused by the transport of hydrogen species in the device.
Written on Version K-2015.06
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